| PART |
Description |
Maker |
| FA7612CN FA7612CP FA7612CPN FA7610CN FA7610CP FA76 |
Bipolar IC for switching power supply control
FA7610CPN/FA7612CPN/FA7617CPN Bipolar IC Switching Power Supply Control
FA7610CPN/FA7612CPN/FA7617CPN Bipolar IC Switching Power Supply Control
CAP CER 2000PF 50V 5% C0G 0603 0.08 A SWITCHING CONTROLLER, 500 kHz SWITCHING FREQ-MAX, PDSO8
|
COLLMER SEMICONDUCTOR INC
FUJI[Fuji Electric]
Fuji Electric Holdings Co., Ltd.
|
| FA7630CP FA7630CPE |
Bipolar IC For Switching Power Supply Control 0.5 A DUAL SWITCHING CONTROLLER, 500 kHz SWITCHING FREQ-MAX, PDIP20
|
Fuji Electric Holdings Co., Ltd.
|
| MJE18002-D |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications
|
ON Semiconductor
|
| FA5332P FA5332PM FA5331P FA5331PM FA5332M FA5331M |
Bipolar IC For Power Factor Correction 1.5 A POWER FACTOR CONTROLLER, 220 kHz SWITCHING FREQ-MAX, PDIP16
Bipolar IC For Power Factor Correction 1.5 A POWER FACTOR CONTROLLER, 150 kHz SWITCHING FREQ-MAX, PDIP16
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| FA7616CP FA7616CPE FA7616CPV |
Bipolar IC For Switching Power Supply Control
|
FUJI[Fuji Electric]
|
| MJE18204 MJF18204 ON2025 |
SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications
From old datasheet system
POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
|
| GT40M101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA
|
| GT20D201 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL IGBT HIGH POWER SWITCHING APPLICATION
|
TOSHIBA
|
| GT60M104 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA
|
| GT10Q101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
|
TOSHIBA
|
